Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

Autor: Qiliang Li, John E. Bonevich, Curt A. Richter, Christina A. Hacker, Hao Zhu, Sean N. Natoli, Sujitra J. Pookpanratana, John S. Suehle, Tong Ren
Rok vydání: 2015
Předmět:
Zdroj: ACS applied materialsinterfaces. 7(49)
ISSN: 1944-8252
Popis: In this work, high-performance top-gated nanowire molecular flash memory has been fabricated with redox-active molecules. Different molecules with one and two redox centers have been tested. The flash memory has clean solid/molecule and dielectric interfaces, due to the pristine molecular self-assembly and the nanowire device self-alignment fabrication process. The memory cells exhibit discrete charged states at small gate voltages. Such multi-bit memory in one cell is favorable for high-density storage. These memory devices exhibit fast speed, low power, long memory retention, and exceptionally good endurance (10(9) cycles). The excellent characteristics are derived from the intrinsic charge-storage properties of the protected redox-active molecules. Such multi-bit molecular flash memory is very attractive for high-endurance and high-density on-chip memory applications in future portable electronics.
Databáze: OpenAIRE