| Autor: |
Qiliang Li, John E. Bonevich, Curt A. Richter, Christina A. Hacker, Hao Zhu, Sean N. Natoli, Sujitra J. Pookpanratana, John S. Suehle, Tong Ren |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
ACS applied materialsinterfaces. 7(49) |
| ISSN: |
1944-8252 |
| Popis: |
In this work, high-performance top-gated nanowire molecular flash memory has been fabricated with redox-active molecules. Different molecules with one and two redox centers have been tested. The flash memory has clean solid/molecule and dielectric interfaces, due to the pristine molecular self-assembly and the nanowire device self-alignment fabrication process. The memory cells exhibit discrete charged states at small gate voltages. Such multi-bit memory in one cell is favorable for high-density storage. These memory devices exhibit fast speed, low power, long memory retention, and exceptionally good endurance (10(9) cycles). The excellent characteristics are derived from the intrinsic charge-storage properties of the protected redox-active molecules. Such multi-bit molecular flash memory is very attractive for high-endurance and high-density on-chip memory applications in future portable electronics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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