Reliability testing of integrated low-temperature PVD PZT films
| Autor: | Sven Rzepka, Daniel Monteiro Diniz Reis, Karla Hiller |
|---|---|
| Přispěvatelé: | Publica |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
02 engineering and technology Lead zirconate titanate 01 natural sciences Pulsed laser deposition law.invention chemistry.chemical_compound Reliability (semiconductor) law 0103 physical sciences Ceramic Electrical and Electronic Engineering Safety Risk Reliability and Quality 010302 applied physics Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics Engineering physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Capacitor chemistry Overvoltage visual_art visual_art.visual_art_medium 0210 nano-technology Voltage |
| Zdroj: | Microelectronics Reliability. :835-839 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2018.06.060 |
| Popis: | Reliability and integration of Lead Zirconate Titanate (PZT) is still a strong concern regarding its commercialization. In this work an approach to include reliability on wafer-level for integration and process development is presented. Long-term leakage current development with high statistics of integrated low-temperature PVD PZT capacitors at different temperature, voltage and polarity are discussed. Strong similarities to the behavior of pulsed laser deposition (PLD), sol-gel and ceramic PZT were obtained. It is proposed to use the current evolution after first breakdown as possible indication of remaining useful life. Changes of the Weibull slope above a temperature of 150 °C and gradual change over voltage acceleration in the range of 100 kV/cm to 200 kV/cm were found. This indicates that accelerated lifetime testing in the temperature range below 150 °C is possible and caution is required for voltage acceleration. |
| Databáze: | OpenAIRE |
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