Ultrathin electronic synapse having high temporal/spatial uniformity and an Al2O3/graphene quantum dots/Al2O3 sandwich structure for neuromorphic computing
| Autor: | Fushan Li, Yueting Zheng, Tae Whan Kim, Hailong Hu, Chaoxing Wu, Tailiang Guo, Kaiyu Yang, Wei Chen, Zhongwei Xu, Fumin Ma |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
lcsh:Biotechnology Nanoparticle 02 engineering and technology Electron 010402 general chemistry 01 natural sciences law.invention Atomic layer deposition Condensed Matter::Materials Science law Condensed Matter::Superconductivity lcsh:TP248.13-248.65 lcsh:TA401-492 General Materials Science Quantum tunnelling Electronic circuit Quantitative Biology::Neurons and Cognition business.industry Graphene Condensed Matter::Other 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Computer Science::Other Neuromorphic engineering Quantum dot Modeling and Simulation Optoelectronics lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology business |
| Zdroj: | NPG Asia Materials, Vol 11, Iss 1, Pp 1-10 (2019) |
| ISSN: | 1884-4057 1884-4049 |
| Popis: | An electronic synapse (e-synapse) based on memristive switching is a promising electronic element that emulates a biological synapse to realize neuromorphic computing. However, the complex resistive switching process it relies on hampers the reproducibility of its performance. Thus, achievement of a reproducible electronic synapse with a high rate of finished products has become a significant challenge in the development of an artificial intelligent circuit. Here, we demonstrate an ultrathin e-synapse having high yield (>95%), minimal performance variation, and extremely low power consumption based on an Al2O3/graphene quantum dots/Al2O3 sandwich structure that was fabricated using atomic layer deposition. The e-synapse showed both high device-to-device and cycle-to-cycle reproducibility with high stability, endurance, and switching uniformity, because the essential synaptic behaviors could be observed. This implementation of an e-synapse with an Al2O3/graphene quantum dots/Al2O3 structure should intensify motivation for engineering e-synapses for neuromorphic computing. Circuits that emulate the actions of biological synapses can be fabricated from devices known as quantum tunnel junctions. Fushan Li from China’s Fuzhou University, Tae Whan Kim from Korea’s Hanyang University, and colleagues produced an ‘e-synapse’ where a thin insulating film prevents electrons from moving through a circuit, except for a small number that jump across the barrier through quantum tunneling. When the researchers embedded graphene quantum dots in the film, they found that these nanoparticles switched the device between low and high resistance states by either trapping or releasing tunneling electrons. This allows the circuit to mimic certain functions of the brain; the gradual accumulation of electrons and their spontaneous release, for example, occurred on timeframes similar as seen in short-term memory loss. The team’s manufacturing scheme yielded devices with high stability and reproducibility. This article demonstrates an ultrathin e-synapse having high yield, minimal performance variation, and extremely low power consumption based on a Al2O3/graphene quantum dots/Al2O3 sandwich structure that was fabricated by using atomic layer deposition. It showed both high device-to-device and cycle-to-cycle reproducibility with high stability, endurance, and switching uniformity, because of which the essential synaptic behaviors could be observed. This implementation of an e-synapse with an Al2O3/graphene quantum dots/Al2O3 structure should intensify motivation for engineering e-synapses for neuromorphic computing. |
| Databáze: | OpenAIRE |
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