Nanometer-Scale Uniform Conductance Switching in Molecular Memristors
| Autor: | Marc Chaigneau, Manohar Lal, Sreebrata Goswami, Ariando, Santi Prasad Rath, R. Stanley Williams, Debalina Deb, Agnès Tempez, Sreetosh Goswami, Thirumalai Venkatesan |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Conductance 02 engineering and technology Memristor Conductive atomic force microscopy 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Resistive random-access memory symbols.namesake Mechanics of Materials law Molecular film Electroforming symbols Optoelectronics General Materials Science 0210 nano-technology business Raman spectroscopy Nanoscopic scale |
| Zdroj: | Advanced materials (Deerfield Beach, Fla.). 32(42) |
| ISSN: | 1521-4095 |
| Popis: | One common challenge highlighted in almost every review article on organic resistive memory is the lack of areal switching uniformity. This, in fact, is a puzzle because a molecular switching mechanism should ideally be isotropic and produce homogeneous current switching free from electroforming. Such a demonstration, however, remains elusive to date. The reports attempting to characterize a nanoscopic picture of switching in molecular films show random current spikes, just opposite to the expectation. Here, this longstanding conundrum is resolved by demonstrating 100% spatially homogeneous current switching (driven by molecular redox) in memristors based on Ru-complexes of azo-aromatic ligands. Through a concurrent nanoscopic spatial mapping using conductive atomic force microscopy and in operando tip-enhanced Raman spectroscopy (both with resolution |
| Databáze: | OpenAIRE |
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