Behaviour of the conductivity in metallic 70 Ge:Ga close to the metal-insulator transition
| Autor: | Said Amrane, Mohamed Errai |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
0211 other engineering and technologies 02 engineering and technology low temperature 010501 environmental sciences Conductivity electron-electron interactions 01 natural sciences Metal Electrical resistivity and conductivity Impurity impurity concentration 021108 energy weak localization Metal–insulator transition lcsh:Environmental sciences 0105 earth and related environmental sciences lcsh:GE1-350 Condensed matter physics Magnetic field Weak localization visual_art visual_art.visual_art_medium Exponent transport properties 70ge: ga semiconductor |
| Zdroj: | E3S Web of Conferences, Vol 229, p 01056 (2021) |
| ISSN: | 2267-1242 |
| DOI: | 10.1051/e3sconf/202122901056 |
| Popis: | The electrical transport properties in sample 1 of impurity concentration n=xx of the 70Ge: Ga system are studied in the absence of a magnetic field and at low temperature in the range 0.53 to 0.017 K. It is noted that the electrical conductivity of sample 1 exhibits a metallic behavior. We found that the exponent S is equal to 0.5 (σ=σ(T=0)+mTs). This result is in agreement with the theory of weak localization (WL) at 3D and the theory of electronelectron interactions (EEI). We also found that sample 1 is located near the metal-insulator transition (MIT) of the metallic side. |
| Databáze: | OpenAIRE |
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