Ferroelectricity in yttrium-doped hafnium oxide
| Autor: | Thomas Mikolajick, Jonas Sundqvist, Martin Lemberger, Johannes Müller, L. Wilde, I. Müller, T. S. Böscke, Ulrich Böttger, Lothar Frey, Uwe Schröder, P. Kücher |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Analytical chemistry General Physics and Astronomy chemistry.chemical_element Nanotechnology Chemical vapor deposition Yttrium Coercivity Ferroelectricity Titanium nitride Technische Fakultät -ohne weitere Spezifikation Atomic layer deposition chemistry.chemical_compound chemistry Orthorhombic crystal system Thin film ddc:600 |
| Popis: | Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO(1.5) in HfO(2) was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase. The potential ferroelectricity of this orthorhombic phase was confirmed by polarization hysteresis measurements on titanium nitride based metal-insulator-metal capacitors. For 5.2 mol% YO(1.5) admixture the remanent polarization peaked at 24 mu C/cm(2) with a coercive field of about 1.2 MV/cm. Considering the availability of conformal deposition processes and CMOS-compatibility, ferroelectric Y:HfO(2) implies high scaling potential for future, ferroelectric memories. |
| Databáze: | OpenAIRE |
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