Development of Under Layer Material for EUV Lithography

Autor:	Rikimaru Sakamoto, Endo Takafumi, Bang-Ching Ho, Ryuji Ohnishi, Noriaki Fujitani
Rok vydání:	2011
Předmět:	Optics Materials science Resist business.industry Extreme ultraviolet lithography Extreme ultraviolet Multiple patterning Optoelectronics X-ray lithography business Critical dimension Lithography Next-generation lithography
Zdroj:	ECS Transactions. 34:257-262
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3567590
Popis:	For the next generation lithography (NGL), several technologies have been proposed to achieve the 22nm-node devices and beyond. Extreme ultraviolet (EUV) lithography is one of the candidates for the next generation lithography. For lithography processes, the Line width roughness (LWR) and the pattern collapse of resist are the most critical issues for NGL, because of the small target critical dimension (CD) size and high aspect ratio. In this study, we design the new concept of EUV Under layer (UL) material to meet these requirements and study the impact of polymer design for pattern collapse behavior, pattern profile and LWR control by using EUV exposure tool.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14e082f3a66a41e397adb548b4afaec4 https://doi.org/10.1149/1.3567590 Zobrazit plný text záznamu