High-Power High-Brightness Operation of a 2.25-$\mu$m (AlGaIn)(AsSb)-Based Barrier-Pumped Vertical-External-Cavity Surface-Emitting Laser
Autor: | K. Kuhler, Joachim Wagner, B. Rosener, Christian Manz, Marcel Rattunde, N. Schulz |
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Přispěvatelé: | Publica |
Rok vydání: | 2008 |
Předmět: |
GaSb
(AlGaIn)(AsSb) Materials science Halbleiterlaser VECSEL Temperature measurement law.invention Optical pumping Optics law oberflächenemittierender Laser Halbleiter-Scheibenlaser Electrical and Electronic Engineering semiconductor laser Beam diameter business.industry Infrarot-Laser Laser Vertical-external-cavity surface-emitting-laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials infrared laser semiconductor disc laser Physics::Accelerator Physics Optoelectronics M squared Laser beam quality business surface emitting laser Beam (structure) |
Zdroj: | IEEE Photonics Technology Letters. 20:502-504 |
ISSN: | 1941-0174 1041-1135 |
DOI: | 10.1109/lpt.2008.918874 |
Popis: | We report on the output power performance and beam profile analysis of an optically pumped GaSb-based vertical-external-cavity surface-emitting laser operating at 2.25 mu m. The use of a SiC heatspreader and a precise control of the temperature-dependent modal gain allowed for improved high-power operation with a maximum continuous-wave output power of 3.4 W at -10 degrees C heatsink temperature. At 0 degrees C, a maximum output power >2.9 W was observed and still more than 1.6 W were obtained at room temperature. Using second-order moments for the definition of the beam diameter, a beam propagation factor of M-2 similar to 5 was measured at maximum output power. Optimizing the beam quality of the laser resulted in a beam profile close to the Gaussian TEM00 mode (M-2 approximate to 1.5) and still more than 2-W output power at 0 degrees C. |
Databáze: | OpenAIRE |
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