Transient processes in the GaAs-based microwave-pin-diodes
| Autor: | А. Yu. Yushchenko, V. G. Bozhkov, G. I. Ayzenshtat |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry PIN diode General Physics and Astronomy Radius диоды Gallium arsenide Pulse (physics) law.invention арсенид галлия chemistry.chemical_compound интегральные схемы монолитные chemistry law Optoelectronics Transient (oscillation) business Microwave Forward current Diode |
| Zdroj: | Russian physics journal. 2015. Vol. 57, № 12. P. 1627-1633 |
| Popis: | The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resulting in a complicated pulse shape during the diode switching. The dependences of the effective lifetime on the diode radius and forward current value are measured. It is experimentally established that the effective lifetime in the diodes depends on the radius of the active region. |
| Databáze: | OpenAIRE |
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