Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate
| Autor: | Karel Saksl, Iwanna Jacyna, Dorota Klinger, Sebastian Strobel, Tomáš Burian, Igor Alexandrovich Makhotkin, Marcin T. Klepka, Bart Faatz, Libor Juha, Ryszard Sobierajski, R.A. Loch, Věra Hájková, Kai Tiedtke, Sven Toleikis, Jaromir Chalupsky, Martin Hermann, Hartmut Enkisch, Piotr Dłużewski, Jerzy B. Pelka, V. Vozda, Eric Louis |
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| Přispěvatelé: | XUV Optics |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element 02 engineering and technology METIS-317161 021001 nanoscience & nanotechnology 01 natural sciences Fluence Atomic and Molecular Physics and Optics Pulse (physics) Wavelength Optics chemistry Extreme ultraviolet IR-100631 0103 physical sciences Femtosecond Pulse wave ddc:530 Irradiation Atomic physics 010306 general physics 0210 nano-technology business |
| Zdroj: | Optics express 24(14), 15468-15477 (2016). doi:10.1364/OE.24.015468 Optics express, 24(14), 15468-15477. The Optical Society Optics Express |
| ISSN: | 1094-4087 |
| Popis: | The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm2. Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm2) and liquid state (54 mJ/cm2), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes. |
| Databáze: | OpenAIRE |
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