Blackbody-like infrared radiation in stacked graphene P–N junction diode
| Autor: | Naruse Murakami, Yoshiki Sugiyama, Yasuhide Ohno, Masao Nagase |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Graphene Infrared Bolometer General Engineering General Physics and Astronomy 01 natural sciences law.invention law 0103 physical sciences Optoelectronics Emission spectrum business Spectroscopy p–n junction Ohmic contact Diode |
| Zdroj: | Japanese Journal of Applied Physics. 60:SCCD01 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | The electrical and optical properties of a stacked graphene p–n junction were investigated. N-type and p-type graphene films epitaxially grown on a SiC substrate were directly bonded to each other in a face-to-face manner. The current–voltage characteristics of the graphene junction diode exhibited an Ohmic behavior below 20 V. The conductance increased in the bias range above 20 V and had a peak around 65 V. The emission spectrum and temperature of the graphene p–n junction were measured using Fourier-transform far-infrared (FTIR) spectroscopy and infrared bolometer array. An electrically induced blackbody-like radiation with a peak wavelength of 10.2 μm was observed. Although the temperature change estimated using the bolometer results was 66 K at a power of 1.2 W, the peak wavelength of the FTIR spectrum was constant. An electrically induced blackbody-like far-infrared emission diode with a defined peak wavelength was successfully realized using the stacked graphene p–n junctions. |
| Databáze: | OpenAIRE |
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