Semi-Insulating Silicon for Microwave Devices
| Autor: | Douglas Jordan, Robert J. Falster, Kanad Mallik, Peter R. Wilshaw |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon business.industry Band gap chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics chemistry Impurity Electrical resistivity and conductivity Optoelectronics General Materials Science Wafer business Microwave Energy (signal processing) Semi insulating |
| Zdroj: | Solid State Phenomena. :101-106 |
| ISSN: | 1662-9779 |
| Popis: | The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ∼180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ∼5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible. © (2010) Trans Tech Publications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|