Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain
| Autor: | Cheng Guo Chen, Bo Chin Wang, Yean-Kuen Fang, Jone F. Chen, Kun Yuan Lo, Po Chin Huang, Chih-Wei Yang, Kai Shiang Tsai, Tsung Hsien Kao, Osbert Cheng, San Lein Wu, Shih Chang Tsai |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Article Subject business.industry Infrasound Attenuation length Oxide Insulator (electricity) Trapping chemistry.chemical_compound Semiconductor chemistry lcsh:Technology (General) Optoelectronics lcsh:T1-995 General Materials Science business Telecommunications Quantum tunnelling High-κ dielectric |
| Zdroj: | Journal of Nanomaterials, Vol 2014 (2014) |
| ISSN: | 1687-4129 1687-4110 |
| Popis: | We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through1/f noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel. Consequently, lower1/f noise level in HK pMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors. This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics. |
| Databáze: | OpenAIRE |
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