Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs
| Autor: | Enrico Zanoni, M. Rzin, Kalparupa Mukherjee, Gaudenzio Meneghesso, Z. Gao, C. De Santi, Matteo Meneghini |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering 02 engineering and technology Trapping High-electron-mobility transistor Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage Robustness (computer science) Electric field 0103 physical sciences 0202 electrical engineering electronic engineering information engineering State of art Optoelectronics Stress conditions Electrical and Electronic Engineering Safety Risk Reliability and Quality business AND gate |
| Popis: | This work is aimed at investigating the performance and reliability limits of a commercially available state-of-the-art RF GaN HEMT technology. Measurement strategies to recognize and assess trap-induced degradations, prevalent in mature technologies, are discussed. Double pulsed measurements are used to capture and quantify threshold instabilities, and their evolution with temperature, for short quiescent near-threshold and off-state stress conditions. A versatile transient measurement technique evaluates threshold voltage fluctuations in the 10 μs–100 s temporal range, during stress or recovery phases, for different trap-filling configurations. Corresponding recovery transients between 27 °C to 130 °C are analysed to extract a trap activation energy of 0.53–0.56 eV for this technology. Finally, drain and gate step-stress tests are performed, providing an overview into the robustness of the gate contact under high electric fields. |
| Databáze: | OpenAIRE |
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