Large spin Hall effect in Si at room temperature
| Autor: | Anand Katailiha, Paul C. Lou, Ward P. Beyermann, Tonmoy Bhowmick, Roger K. Lake, Sandeep Kumar, Ravindra G. Bhardwaj |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Condensed Matter - Mesoscale and Nanoscale Physics Magnetoresistance Condensed matter physics Spintronics Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Inverse Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Coupling (probability) Magnetic field Condensed Matter::Materials Science Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Spin Hall effect Condensed Matter::Strongly Correlated Electrons Order of magnitude Spin-½ |
| Zdroj: | Physical Review B. 101 |
| ISSN: | 2469-9969 2469-9950 |
| DOI: | 10.1103/physrevb.101.094435 |
| Popis: | Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin Hall effect (spin current generation) and inverse spin Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance, and magnetothermal transport measurements to study the spin transport behavior in freestanding Si thin films. We observe a large spin Hall magnetoresistance in both $p\text{\ensuremath{-}}\mathrm{Si}$ and $n\text{\ensuremath{-}}\mathrm{Si}$ at room temperature and it is an order of magnitude larger than that of Pt. One explanation of the unexpectedly large and efficient spin Hall effect is spin-phonon coupling instead of spin-orbit coupling. The macroscopic origin of the spin-phonon coupling can be large strain gradients that can exist in the freestanding Si films. This discovery in a light, earth abundant and centrosymmetric material opens a new path of strain engineering to achieve spin dependent properties in technologically highly developed materials. |
| Databáze: | OpenAIRE |
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