Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors

Autor: Mota Frutuoso, Tadeu, Garros, Xavier, Lugo-Alvarez, José, Kom Kammeugne, Roméo, Mohgouk Zouknak, Louis David, Viey, Abygaël, Vandendaele, William, Ferrari, Philippe, Gaillard, Fred
Přispěvatelé: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), IEEE
Rok vydání: 2022
Předmět:
Zdroj: IEEE International Reliability Physics Symposium (IRPS 2022)
IEEE International Reliability Physics Symposium (IRPS 2022), Mar 2022, Dallas, United States. ⟨10.1109/IRPS48227.2022.9764550⟩
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Popis: International audience; Two Ultra-Fast capacitance characterization methods based on the displacement current measure are explored for MOS capacitance devices. The first method measure the variation of charge obtained from several 100ns short pulses while the second uses a (1 to 5µs/V) continuous ramp to perform the capacitance measurement. Different applications are investigated for each method depending on measurement time and precision. The short pulsed method is used to perform a CV trap spectroscopy. Thanks to distinctive charging and discharging phases we are able to separately extract the capture and emission behavior of interface traps. We demonstrate that BTI characterization can be performed on simple MOScap using CV measurements based on IV ramp as in MOSFET devices. Furthermore, both methods can be combined in oxides presenting a high hysteresis behavior, to separately characterize low frequency oxide trapping from high frequency interface state trapping.
Databáze: OpenAIRE
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