Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

Autor:	Sorina Iftimie, Elena Matei, Dan Buca, A. Slav, Florin Comanescu, C. Palade, Ana-Maria Lepadatu, Valentin S. Teodorescu, Mariana Braic, Sorina Lazanu, Magdalena Lidia Ciurea, Nicolae Catalin Zoita, Toma Stoica, I. Dascalescu
Rok vydání:	2020
Předmět:	Materials science Nanocrystal business.industry Optoelectronics General Materials Science Heterojunction Light emission High-power impulse magnetron sputtering Photonics business Epitaxy Shortwave infrared Heterojunction diode
Zdroj:	ACS Applied Materials & Interfaces. 12:33879-33886
ISSN:	1944-8252 1944-8244
Popis:	GeSn alloys have the potential of extending the Si photonics functionality in shortwave infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a relaxed Ge buffer on Si(100) wafer by using high power impulse magnetron sputtering (HiPI-MS). Detailed X-ray reciprocal space mapping and HRTEM investigations indicate higher crystalline quality of GeSn epitaxial layers deposited by Ge HiPI-MS compared to commonly used radio frequency magnetron sputtering (RF-MS). To obtain a rectifying heterostructure for SWIR light detection, a layer of GeSn nanocrystals (NCs) embedded in oxide was deposited on the epitaxial GeSn one. Embedded GeSn NCs are obtained by cosputtering deposition of (Ge
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1378daeb10126040e11a787a2cfe98f1 https://doi.org/10.1021/acsami.0c06212 Zobrazit plný text záznamu