Neutron irradiation test of depleted CMOS pixel detector prototypes
| Autor: | N. Wermes, Fabian Hügging, Laura Gonella, Hans Krügerc, Vladimir Cindro, Andrej Gorišek, Bojan Hiti, Marko Mikuž, Igor Mandić, M. Zavrtanik, Gregor Kramberger, David-leon Pohl, Tomasz Hemperek, Michael Daas |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Physics - Instrumentation and Detectors 010308 nuclear & particles physics Physics::Instrumentation and Detectors Detector FOS: Physical sciences Substrate (electronics) Instrumentation and Detectors (physics.ins-det) 01 natural sciences Acceptor Noise (electronics) Space charge Fluence Electrical resistivity and conductivity 0103 physical sciences Irradiation Detectors and Experimental Techniques Atomic physics 010306 general physics physics.ins-det Instrumentation Mathematical Physics |
| Popis: | Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 kΩ cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1 · 10(13) n/cm(2) and 5 · 10(13) n/cm(2) and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1 · 10(15) n/cm(2) is more than 50 μm at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments. Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1$\cdot$10$^{13}$ n/cm$^{2}$ and 5$\cdot$10$^{13}$ n/cm$^{2}$ and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1$\cdot$10$^{15}$ n/cm$^{2}$ is more than 50 $\mu$m at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments. |
| Databáze: | OpenAIRE |
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