| Autor: |
Shizuo Fujita, Sang-Woo Kim, Teruhisa Kotani, Masaya Ueda, Shigeo Fujita |
| Jazyk: |
angličtina |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
APPLIED PHYSICS LETTERS. 83(17):3593-3595 |
| ISSN: |
0003-6951 |
| Popis: |
Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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