On the nature of the 3.41 eV luminescence in hexagonal GaN
| Autor: | Florian Kurth, Michael Schmidt, S. Fischer, F. Anders, Bruno K. Meyer, G Steude, J. Holst, Frank Bertram, Jürgen Christen, B Mensching, L. Eckey, Detlev M. Hofmann, Axel Hoffmann, B Rauschenbach, M. Topf |
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| Jazyk: | angličtina |
| Rok vydání: | 1998 |
| Předmět: |
Photoluminescence
Materials science business.industry Exciton Cathodoluminescence Gallium nitride Condensed Matter Physics Molecular physics Inorganic Chemistry chemistry.chemical_compound Ion implantation chemistry Materials Chemistry Optoelectronics Luminescence business Recombination Line (formation) |
| Popis: | We studied the recombination at about 3.410 eV in nominally undoped GaN and highly oxygen-doped GaN by photoluminescence (PL) and cathodoluminescence (CL). For this line we find an upper limit for the thermal activation energy of EA⩽21±3 meV. In time-resolved PL, lifetimes of 300–480 ps are observed indicating excitonic recombination. The defect giving rise to this emission can be created by Ar+ ion implantation. In conclusion, the 3.410 eV luminescence is attributed to excitons bound to structural defects in hexagonal GaN. |
| Databáze: | OpenAIRE |
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