A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions
| Autor: | Camilla Nichetti, Giuseppe Cautero, Fulvia Arfelli, Pierpaolo Palestri, T. Steinhartova, Francesco Driussi, Ralph H Menk, Luca Selmi, M. Antonelli, A. Pilotto, Giorgio Biasiol |
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| Přispěvatelé: | Pilotto, A., Palestri, P., Selmi, L., Antonelli, M., Arfelli, F., Biasiol, G., Cautero, G., Driussi, F., Menk, R. H., Nichetti, C., Steinhartova, T. |
| Rok vydání: | 2019 |
| Předmět: |
APDS
Physics::Instrumentation and Detectors Avalanche photodiodes (APDs) Noise figure 01 natural sciences Noise (electronics) law.invention law Ionization 0103 physical sciences Electronic Optical and Magnetic Materials Electrical and Electronic Engineering Electron ionization 010302 applied physics Physics Electronic Optical and Magnetic Material excess noise factor impact ionization Avalanche photodiode Electronic Optical and Magnetic Materials Computational physics Impact ionization Multiplication |
| Zdroj: | I.E.E.E. transactions on electron devices 66 (2019): 1810–1814. doi:10.1109/TED.2019.2900743 info:cnr-pdr/source/autori:Pilotto A.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F.; Menk R.H.; Nichetti C.; Steinhartova T./titolo:A new expression for the gain-noise relation of single-carrier avalanche photodiodes with arbitrary staircase multiplication regions/doi:10.1109%2FTED.2019.2900743/rivista:I.E.E.E. transactions on electron devices/anno:2019/pagina_da:1810/pagina_a:1814/intervallo_pagine:1810–1814/volume:66 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2019.2900743 |
| Popis: | We propose a simple expression to relate the total excess noise factor of a single-carrier multiplication staircase avalanche photodiode (APD) to the excess noise factor and gain given by the individual conduction band discontinuities. The formula is valid when electron impact ionization dominates hole impact ionization; hence, it is especially suited for staircase APDs with In-rich multiplication regions, as opposed, for example, to GaAs/AlGaAs systems where hole ionization plays an important role. The formula has been verified by accurate means of numerical simulations based on a newly developed nonlocal history dependent impact ionization model. |
| Databáze: | OpenAIRE |
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