Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices
| Autor: | Martin Kuball, Daniel J. Twitchen, Daniel Francis, Firooz Faili, Callum Middleton, Julian Anaya, James W Pomeroy, Dong Liu |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Scanning electron microscope Diamond films Nanotechnology 02 engineering and technology engineering.material 01 natural sciences Focused ion beam Thermal conductivity 0103 physical sciences CDTR General Materials Science Thermal stability Wafer Microstructure 010302 applied physics business.industry Mechanical Engineering Metals and Alloys Diamond 021001 nanoscience & nanotechnology Condensed Matter Physics Compound semiconductors Mechanics of Materials engineering Optoelectronics Seeding 0210 nano-technology business |
| Zdroj: | Liu, D, Francis, D, Faili, F, Middleton, C, Anaya, J, Pomeroy, J W, Twitchen, D J & Kuball, M 2017, ' Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices ', Scripta Materialia, vol. 128, pp. 57-60 . https://doi.org/10.1016/j.scriptamat.2016.10.006 |
| ISSN: | 1359-6462 |
| Popis: | The impact of seeding of the diamond growth on the microstructural properties of GaN-on-diamond wafers was studied using in situ focused ion beam cross-sectioning and scanning electron microscopy imaging. Microstructural studies revealed that the seeding conditions are a critical parameter to obtain an optimal material, allowing the manufacture of GaN-on-diamond wafers with no microscopic defects and with structural stability under thermal annealing at 825 °C. The use of the right seeding conditions also results in homogeneous thermal properties across four inch GaN-on-diamond wafers, which is of critical importance for their use for ultra-high power microwave electronic devices. |
| Databáze: | OpenAIRE |
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