Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates
| Autor: | Christine Robert-Goumet, Evelyne Gil, Hadi Hijazi, Vladimir G. Dubrovskii, Dominique Castellucci, Agnès Trassoudaine, Yamina André, Christine Leroux, Geoffrey Avit, Guillaume Monier, Catherine Bougerol |
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| Přispěvatelé: | Institut Pascal (IP), SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-16-IDEX-0001,CAP 20-25,CAP 20-25(2016), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Nanophysique et Semiconducteurs (NPSC), Institut Pascal - Clermont Auvergne (IP), Sigma CLERMONT (Sigma CLERMONT)-Université Clermont Auvergne (UCA)-Centre National de la Recherche Scientifique (CNRS), INRA - Mathématiques et Informatique Appliquées (Unité MIAJ), Institut National de la Recherche Agronomique (INRA), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Sigma CLERMONT (Sigma CLERMONT)-Centre National de la Recherche Scientifique (CNRS), NPSC - Nanophysique et Semiconducteurs, Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF) |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon gouttelette Alloy Nucleation Nanowire chemistry.chemical_element 02 engineering and technology engineering.material 010402 general chemistry Epitaxy 01 natural sciences silicium [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Physical and Theoretical Chemistry Gallium ComputingMilieux_MISCELLANEOUS Hydride 021001 nanoscience & nanotechnology 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials General Energy chemistry Chemical physics [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] engineering 0210 nano-technology Ternary operation |
| Zdroj: | Journal of Physical Chemistry C Journal of Physical Chemistry C, 2018, 122 (33), pp.19230-19235. ⟨10.1021/acs.jpcc.8b05459⟩ Journal of Physical Chemistry C, American Chemical Society, 2018, 122 (33), pp.19230-19235. ⟨10.1021/acs.jpcc.8b05459⟩ |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | International audience; Despite the unavoidable presence of silicon atoms in the catalyst alloy droplets during the vapor-liquid-solid growth of III-V nanowires on silicon substrates, it remains unknown how the nucleation of nanowires is affected by these foreign atoms. In this work, we present the first attempt to quantify the nanowire nucleation rate versus the silicon concentration in the droplet. We calculate the chemical potential difference per Ga-As pair in the quaternary Au-Ga-As-Si liquid alloy droplet and in solid state, and compare it to the ternary Au-Ga-As droplet without silicon. This allows us to compute the nucleation rates of GaAs nanowires versus the silicon concentration under different conditions. We find that the presence of silicon in the droplet decreases the nucleation probability of GaAs nanowires for gallium-rich droplets (with the gallium contents c(GA) greater than 0.6) and increases it for gold-rich droplets (c(GA) < 0.6). The model is used to explain our experimental data for hydride vapor phase epitaxy of gold-catalyzed GaAs nanowires, which easily nucleate on Si(111) covered with different SiO2 layers but do not grow on the bare Si(111). In the latter case, more silicon is etched from the substrate and enters the gallium-rich droplets, which suppresses the nanowire nucleation. We discuss other relevant data, including the known difficulties in obtaining self-assisted GaAs NWs on silicon by chemical epitaxy techniques. These results may be useful for the fine-tuning of III-V nanowire properties and integrating them with silicon electronics. |
| Databáze: | OpenAIRE |
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