Ultra-compact III‒V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s
| Autor: | D, Fitsios, T, Alexoudi, A, Bazin, P, Monnier, R, Raj, A, Miliou, G T, Kanellos, N, Pleros, F, Raineri |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Nanolaser Silicon on insulator 02 engineering and technology Atomic and Molecular Physics and Optics Active layer law.invention Optical bistability Injection locking 020210 optoelectronics & photonics Optics law 0202 electrical engineering electronic engineering information engineering Optoelectronics business Waveguide Electron-beam lithography Photonic crystal |
| Zdroj: | Optics Express |
| ISSN: | 1094-4087 |
| DOI: | 10.1364/oe.24.004270 |
| Popis: | We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650 nm × 285 nm InP-based wire waveguide evanescently coupled to 500 nm × 220 nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2 μm2. Injection locking enables optical bistability allowing for memory operation with only 6.4 fJ/bit switching energies and |
| Databáze: | OpenAIRE |
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