A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation
| Autor: | Wang Chen, Li Han, Hao Zhu, Qing-Qing Sun, Lin Chen |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
retention
Materials science Computer Networks and Communications semi-floating gate transistor anti-disturbance anti-irradiation Silicon on insulator lcsh:TK7800-8360 02 engineering and technology Substrate (electronics) Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences law.invention law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electronics Electrical and Electronic Engineering 010302 applied physics business.industry Transistor lcsh:Electronics 021001 nanoscience & nanotechnology Threshold voltage silicon-on-insulator Semiconductor Hardware and Architecture Control and Systems Engineering writing speed Signal Processing Optoelectronics 0210 nano-technology business Dram Voltage |
| Zdroj: | Electronics, Vol 8, Iss 10, p 1198 (2019) Electronics Volume 8 Issue 10 |
| ISSN: | 2079-9292 |
| Popis: | Over the past decade, the dimensional scaling of semiconductor electronic devices has been facing fundamental and physical challenges, and there is currently an urgent need to increase the ability of dynamic random-access memory (DRAM). A semi-floating gate (SFG) transistor has been proposed as a capacitor-less memory with faster speed and higher density as compared with the conventional one-transistor one-capacitor (1T1C) DRAM technology. The integration of SFG-based memory on the silicon-on-insulator (SOI) substrate has been demonstrated in this work by using the Sentaurus Technology Computer-Aided Design (TCAD) simulation. An enhancement in retention characteristics, anti-disturbance ability, and fast writing capability, have been illustrated. The device exhibits a low operation voltage, a large threshold voltage window of ~3 V, and an ultra-fast writing of 4 ns. In addition, the SOI-based memory has shown a much-improved anti-irradiation capability compared to the devices based on bulk silicon, which makes it much more attractive in broader applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|