An Ultralow Power Mixed Dimensional Heterojunction Transistor Based on the Charge Plasma pn Junction

Autor: Onejae Sul, Hojun Seo, Eunsuk Choi, Sunjin Kim, Jinsil Gong, Jiyoung Bang, Hyoungbeen Ju, Sehoon Oh, Yeonsu Lee, Hyeonjeong Sun, Minjin Kwon, Kyungnam Kang, Jinki Hong, Eui‐Hyeok Yang, Yunchul Chung, Seung‐Beck Lee
Rok vydání: 2022
Předmět:
Zdroj: Small. 18:2202153
ISSN: 1613-6829
1613-6810
DOI: 10.1002/smll.202202153
Popis: Development of a reliable doping method for 2D materials is a key issue to adopt the materials in the future microelectronic circuits and to replace the silicon, keeping the Moore's law toward the sub-10 nm channel length. Especially hole doping is highly required, because most of the transition metal dichalcogenides (TMDC) among the 2D materials are electron-doped by sulfur vacancies in their atomic structures. Here, hole doping of a TMDC, tungsten disulfide (WS
Databáze: OpenAIRE
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