Room temperature bonding for vacuum applications: climatic and long time tests
| Autor: | Christian Drabe, Sergiu Langa, T. Ludewig, J. Utsumi |
|---|---|
| Přispěvatelé: | Publica |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Silicon Wafer bonding Mechanical engineering chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Hardware and Architecture Bonding strength Wafer Vacuum level Electrical and Electronic Engineering Composite material Wafer-level packaging |
| Zdroj: | Microsystem Technologies. 19:681-687 |
| ISSN: | 1432-1858 0946-7076 |
| Popis: | A detailed and quantitative motivation for the necessity of room temperature (RT) bonding for wafer level packaging of silicon micro-mirrors will be given. Results on RT 6 inch wafer bonding with vacuum encapsulation on test structures are presented. Structured as well as unstructured wafers have been bonded at RT using a Mitsubishi Heavy Industries bonder. Unstructured wafers were used for the determination of the bonding strength, whereas the structured wafers were used for the evaluation of vacuum level and its stability with time. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink