Morphologic improvement of the PBDTTT-C and PC71BM blend film with mixed solvent for high-performance inverted polymer solar cells
| Autor: | Chi-Hsing Hsu, Shang-Hong Lin, Shiang Lan, Ching-Fuh Lin, Jen-Yu Sun, Hsin-Yi Chen |
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| Rok vydání: | 2013 |
| Předmět: |
chemistry.chemical_classification
Materials science Mechanical Engineering Bioengineering Heterojunction General Chemistry Polymer Polymer solar cell Active layer Dichlorobenzene chemistry.chemical_compound chemistry Chemical engineering Mechanics of Materials Chlorobenzene Organic chemistry General Materials Science Electrical and Electronic Engineering Thin film Current density |
| Zdroj: | Nanotechnology. 24(48) |
| ISSN: | 1361-6528 |
| Popis: | Tracing the evolution of the bulk heterojunction structure, a dramatic promotion in the efficiency of polymer solar cells has been obtained in recent years. The active layer morphology of low-bandgap polymer solar cells is one of the critical factors for high-efficiency performance. In the past, the relationship between morphology improvement and the device's characteristics (such as efficiency, fill factor and short-circuit current) in low-bandgap polymer solar cells has been studied intensively with regards to the conventional structure. Here we demonstrate the morphologic improvement of the poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b;4,5-b']dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiopene)-2,6-diyl]/[6,6]-phenyl C71 butyric acid methyl ester (PBDTTT-C/PC71BM) blend film for inverted solar cells. By utilizing a mixed solvent of dichlorobenzene/chlorobenzene with (1,8-diiodooctane) additives, the device efficiency can be significantly enhanced, from 0.92% to 4.43%. This enhancement is attributed to active layer morphologic improvement promoting carrier transport. Furthermore, the thickness optimization of the active layer and the electron blocking layer MoO3 further contributes to efficiency. The device performance could be achieved with an efficiency as high as 5.35%, an open-circuit voltage of 0.70 V, a short-circuit current density of 13.5 mA cm(-2), and a fill factor of 57%. |
| Databáze: | OpenAIRE |
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