| Autor: |
C. Heedt, F.G. Tegude, M. Mihaila |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of International Conference on Microelectronics. |
| DOI: |
10.1109/icmel.1995.500908 |
| Popis: |
Experiments aiming at finding the microscopic origin of 1/f noise in HEMT's are described. They were suggested by the existence of some specific energy relaxation mechanisms in a 2DEG. 1/f-like noise has been found in the drain voltage of lattice-matched InAlAs/InGaAs HEMT's, at drain voltages(V/sub DS/) lower than 55 mV and applied gate voltage V/sub GS/=OV. The tendency for the drain voltage noise spectral density (S/sub v/) is to follow a V/sup 2//sub DS/ dependence, but local deviations manifest at some given voltages. These voltages seemed to be in a good correspondence with some specific phonon energies in the InAlAs/InGaAs system. These phonon signatures indicate that 1/f noise in the channel of InAlAs/InGaAs HEMT's is brought about by lattice scattering. A mobility fluctuation 1/f noise parameter(/spl alpha/) of about 10/sup -3/ for the whole channel has been estimated. It stands for an indirect proof of lattice participation into the channel 1/f noise. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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