Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range
| Autor: | Duygu Ekinci, Betül Güzeldir, Mustafa Sağlam, Ali Baltakesmez, A. Taşer, Züleyha Kudaş |
|---|---|
| Přispěvatelé: | 0-Belirlenecek |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
heterojunction Scanning electron microscope Oxide 02 engineering and technology 01 natural sciences law.invention chemistry.chemical_compound symbols.namesake law 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Graphene oxide 010302 applied physics Nanocomposite Graphene business.industry nanoparticle Heterojunction Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Transmission electron microscopy symbols Optoelectronics current–voltage measurement 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Journal of Electronic Materials. 48:3169-3182 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-019-07088-8 |
| Popis: | Mercaptoundecanoic acid capped-Ag nanoparticles (MUA-AgNPs) assembled on graphene oxide (GO), namely MUA-AgNPs-GO nanocomposite, was used for enhancing current–voltage (I–V) activity and stability of n-lnP based heterojunction devices. The structural, morphological and optical properties of the MUA-AgNPs-GO nanocomposite were examined by Raman spectroscopy, UV–Vis spectroscopy, transmission electron microscopy and scanning electron microscopy measurements. Besides, the Ag/MUA-AgNPs-GO/n-InP/Au-Ge heterojunction was fabricated, and working performance of the heterojunction was investigated in the temperature range of 80–320 K by steps of 20 K. The heterojunction created by the MUA-AgNPs-GO nanocomposite showed improved working performance such as better I–V characteristics, great stability and better rectifying ratio than that of our reference junction. The ideality factor and barrier height values of the junction formed with MUA-AgNPs-GO layer were found to be 1.07 eV and 0.630 eV, respectively. The experimental value of the Richardson constant was determined to be 3.82 A/cm 2 K 2 in the 80–160 K temperature range and to be 6.55 A/cm 2 K 2 in the 160–320 K temperature range. The results showed that the MUA-AgNPs-GO nanocomposite is a favorable candidate to provide modification of barrier height and to improve characteristic parameters for applications of the heterojunction devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink