Field sensing using the magnetoresistance of IrMn exchange-biased tunnel junctions
| Autor: | F. Nguyen Van Dau, H. Jaffrès, Frédéric Petroff, J. Humbert, Annie Vaures, Daniel Lacour |
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| Přispěvatelé: | Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2002 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Magnetoresistance Field (physics) General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Magnetic field Magnetic anisotropy Exchange bias 0103 physical sciences Thermal [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 0210 nano-technology Vicinal Quantum tunnelling |
| Zdroj: | Journal of Applied Physics Journal of Applied Physics, American Institute of Physics, 2002, 91 (7), pp.4655-4658. ⟨10.1063/1.1450050⟩ |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1450050 |
| Popis: | International audience; An original concept of high sensitivity magnetic field sensor using the spin-dependent tunneling effect has been investigated. The required crossed-biased configuration is obtained by combining both shape energy originating from vicinal step bunched Si substrates and unidirectional exchange anisotropy supplied by an Ir 20 Mn 80 film in the ''top-biased'' geometry. We demonstrate a linear and reversible signal at room temperature and above. The smooth loss of sensitivity at higher temperature is shown to be correlated to the thermal dependence of the exchange bias property when IrMn is deposited above the insulating Al 2 O 3 barrier. |
| Databáze: | OpenAIRE |
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