Structural Change of InGaN Nanostructures Grown by Mixed-Source Hydride Vapor Phase Epitaxy

Autor:	Min Yang, Gang Suok Lee, Ah Reum Lee, Jin Eun Ok, Kyung-Hwa Kim, Dong Wan Jo, Hun Soo Jeon, Hyung Soo Ahn
Rok vydání:	2011
Předmět:	Materials science Nanostructure Photoluminescence Physics and Astronomy (miscellaneous) Scanning electron microscope General Engineering chemistry.chemical_element General Physics and Astronomy Nanotechnology Substrate (electronics) Epitaxy Antimony chemistry Chemical engineering Sapphire Indium
Zdroj:	Japanese Journal of Applied Physics. 50:01AC02
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjap.50.01ac02
Popis:	We determined the effect of the type of substrate on the growth of InGaN nanostructures by mixed-source hydride vapor phase epitaxy (HVPE). InGaN nanostructures were formed on c-plane, r-plane sapphire, and undoped GaN substrates at various growth temperatures. Also, we looked into the changes in the structural and optical characteristics of InGaN nanostructures when antimony (Sb) is used as a surfactant during the growth of InGaN nanostructures. The samples were characterized by scanning electron microscopy (SEM) and photoluminescence (PL) measurement. The density of the nanostructures on the surface and the indium composition of the InGaN layer varied depending on the type of substrate and growth temperature. The aligning direction of the nanostructures markedly changed and the indium composition increased when Sb was used as the surfactant during the growth of the InGaN nanostructure, compared with the results of the InGaN nanostructures grown without Sb addition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::116c75a586c61c50835fb75708a94f35 https://doi.org/10.7567/jjap.50.01ac02 Zobrazit plný text záznamu