Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition
| Autor: | Hsiang-Chen Wang, Kai-Yun Yuan, Shih-Wei Feng, Tsai-Pei Li, Miin-Jang Chen, Siu-Keung Fung, Yung-Chen Cheng |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Ozone Photoluminescence chemistry.chemical_element 02 engineering and technology 01 natural sciences Oxygen chemistry.chemical_compound Atomic layer deposition 0103 physical sciences Oxidizing agent Zinc oxide lcsh:TA401-492 General Materials Science Thin film 010302 applied physics Nano Express Strain relaxation Thermal annealing Recrystallization (metallurgy) 021001 nanoscience & nanotechnology Condensed Matter Physics Ozone precursor Chemical engineering chemistry Sapphire lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology |
| Zdroj: | Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-7 (2020) Nanoscale Research Letters |
| DOI: | 10.1186/s11671-020-03382-1 |
| Popis: | Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O3) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm, respectively. Post-deposition thermal annealing is conducted at 300 °C in the ambience of oxygen (O2) for 1 h. With strong oxidizing agent O3 and post-deposition TA in growing ZnO, intrinsic strain and stress are reduced to 0.49% and 2.22 GPa, respectively, with extremely low background electron concentration (9.4 × 1015 cm−3). This is originated from a lower density of thermally activated defects in the analyses of thermal quenching of the integrated intensity of photoluminescence (PL) spectra. TA further facilitates recrystallization forming more defect-free grains and then reduces strain and stress state causing a remarkable decrease of electron concentration and melioration of surface roughness. |
| Databáze: | OpenAIRE |
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