| Autor: |
B. Adelseck, J.-M. Dieudonne, H. Dambkes, P. Narozny |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
IEEE NTC,Conference Proceedings Microwave Systems Conference. |
| DOI: |
10.1109/ntcmws.1995.522853 |
| Popis: |
A number of civil applications such as motion sensors and communications systems are planned to use the Ka-band frequency range. An MMIC chip set for the realization of the millimeter-wave front-end has been developed. The key MMIC circuit functions for Ka-band communication systems have been fabricated. Low noise amplifiers, a medium power amplifier, mixers and a dielectric resonator oscillator (DRO) have been developed using a common 0.25 /spl mu/m PMHFET technology allowing the future integration of several key components on a single chip. A voltage controlled oscillator has been realized in a GaInP-GaAs HBT technology for improvement of the phase noise performance. Low noise Schottky diode upconverter and downconverter are also available in 0.25 /spl mu/m MESFET technology with buried n/sup +/ layer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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