Enhancement of visible light photodetector performance for ultrafast switching using flower shaped gallium nitride nanostructures
| Autor: | Baskar Krishnan, Ramesh Raju, Prabakaran Kandasamy, Sanjay Sankaranarayanan, Saravanan Gengan |
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| Přispěvatelé: | Koneru Lakshmaiah Education Foundation, Hunan University, Ilkka Tittonen Group, Anna University, Department of Electronics and Nanoengineering, Aalto-yliopisto, Aalto University |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Chemical vapour deposition
Materials science Scanning electron microscope Analytical chemistry Cathodoluminescence Gallium nitride 02 engineering and technology Chemical vapor deposition 01 natural sciences chemistry.chemical_compound symbols.namesake X-ray photoelectron spectroscopy 0103 physical sciences High carrier density General Materials Science Spectroscopy Diffractometer 010302 applied physics Gallium nitride nanostructure Mechanical Engineering Metals and Alloys 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Mechanics of Materials symbols High performance photodetector 0210 nano-technology Raman spectroscopy |
| Popis: | Well-defined Dahlia type gallium nitride flowers (GaNFs) have been synthesized on c-plane sapphire substrates at different growth conditions using chemical vapour deposition system. The growth was carried out without any catalyst medium for favouring the nucleation process. Crystal structure of the GaNFs was obtained using x-ray diffractometer (XRD). Scanning electron microscopy (SEM) revealed the morphology of GaNFs. The elemental traces and compositions of the samples were obtained using energy dispersive x-ray (EDX) spectroscopy and x-ray photoelectron spectroscopy (XPS). The optical properties of the samples were analysed using cathodoluminescence (CL) spectroscopy and Raman spectroscopy. From the current-voltage (I-V) response, it was observed that there are no interface and surface related inhomogeneities in the samples. The fabricated photodetector showcased good device performance due to high carrier density in the sample. |
| Databáze: | OpenAIRE |
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