High performance solution processed oxide thin-film transistors with inkjet printed Ag source-drain electrodes
| Autor: | Liam Gillan, Kim Eiroma, Jaakko Leppäniemi, Ari Alastalo, Himadri S. Majumdar |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Fabrication Oxide 02 engineering and technology 01 natural sciences law.invention chemistry.chemical_compound law 0103 physical sciences Materials Chemistry Hardware_INTEGRATEDCIRCUITS ta116 Electronic circuit 010302 applied physics business.industry Transistor Contact resistance General Chemistry OtaNano 021001 nanoscience & nanotechnology Semiconductor chemistry Thin-film transistor Electrode Optoelectronics 0210 nano-technology business |
| Zdroj: | Gillan, L, Leppäniemi, J, Eiroma, K, Majumdar, H & Alastalo, A 2018, ' High performance solution processed oxide thin-film transistors with inkjet printed Ag source-drain electrodes ', Journal of Materials Chemistry C, vol. 6, no. 13, pp. 3220-3225 . https://doi.org/10.1039/c7tc05679f |
| ISSN: | 2050-7534 2050-7526 |
| Popis: | This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm2 (V s)-1 to ∼3.0 cm2 (V s)-1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits. |
| Databáze: | OpenAIRE |
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