Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas

Autor: A. Mark Fox, Elena Marensi, Alistair J. Brash, Stefan A. Maier, Alexander I. Tartakovskii, Luca Sortino, Riccardo Sapienza, Catherine L. Phillips, Panaiot G. Zotev, Javier Cambiasso
Rok vydání: 2021
Předmět:
Materials science
Photon
Photoluminescence
Science
Dephasing
Exciton
FOS: Physical sciences
Physics::Optics
General Physics and Astronomy
02 engineering and technology
Dielectric
01 natural sciences
Article
General Biochemistry
Genetics and Molecular Biology
Nanocavities
Condensed Matter::Materials Science
chemistry.chemical_compound
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
0103 physical sciences
Gallium phosphide
010306 general physics
Quantum optics
Science & Technology
Multidisciplinary
Condensed Matter - Mesoscale and Nanoscale Physics
business.industry
General Chemistry
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Multidisciplinary Sciences
LIGHT
Optical properties and devices
chemistry
Science & Technology - Other Topics
Optoelectronics
Quantum efficiency
EMISSION
0210 nano-technology
business
Zdroj: Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Nature Communications
ISSN: 2041-1723
DOI: 10.1038/s41467-021-26262-3
Popis: Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe2 to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 104 times brighter photoluminescence than in WSe2 placed on low-refractive-index SiO2 pillars. We show that the key to these observations is the increase on average by a factor of 5 of the quantum efficiency of the emitters coupled to the nano-antennas. This further allows us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors.
Single photon emitters (SPEs) in 2D semiconductors can be deterministically positioned using localized strain induced by underlying nanostructures. Here, the authors show SPE coupling in WSe2 to GaP dielectric nanoantennas, substantially increasing quantum efficiency and photoluminescence brightness.
Databáze: OpenAIRE
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