Improvement of InGaP solar cells grown with TBP in planetary MOVPE reactor

Autor: Hassanet Sodabanlu, Gan Li, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama
Rok vydání: 2023
Předmět:
Zdroj: Solar Energy Materials and Solar Cells. 257:112402
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2023.112402
Popis: 8th World Conference on Photovoltaic Energy Conversion; 384-387
The carrier lifetime in unintentionally doped InGaP was significantly deteriorated with an increase in growth (surface) temperature from 560 to 590 °C. With a temperature higher than 600 °C, the growth of InGaP was failed with extremely rough surface morphology. Meanwhile, a larger amount of H2 carrier gas led to a faster TBP flow velocity and an improvement of InGaP surface roughness. These results suggested that, due to fast TBP decomposition processes, the depletion of TBP and insufficient P partial pressure for surface chemical reactions were major problematic issues for the growth of P-related materials in a large planetary MOVPE reactor. The quality of p-type InGaP grown in this reactor with TBP was not as good as that of n-type InGaP indicated by Hall mobility. In this work, InGaP rear homo junction (RJ) and rear hetero junction (RHJ) solar cells utilizing of thick n-InGaP layers exhibited much better photo-carrier collection and performance than the traditional n-on-p solar cell comprising of a thick pInGaP base layer. Moreover, the quality of InGaP was enhanced by the mis-orientation of GaAs (001) toward (111)A, while InGaP grown on GaAs (001) with a mis-cut toward (111)B showed worse results in term of carrier lifetime and solar cell performance.
Databáze: OpenAIRE
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