Microstructure of epitaxial Mg 3 N 2 thin films grown by MBE

Autor: Jesús Zúñiga-Pérez, H. Rotella, P. John, P. Vennéguès, Céline Lichtensteiger, Christiane Deparis
Přispěvatelé: Centre National de la Recherche Scientifique (CNRS), Université Côte d'Azur (UCA), University of Geneva [Switzerland], Department of Quantum Matter Physics [Geneva] (DQMP)
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2021, 129 (9), pp.095303. ⟨10.1063/5.0041903⟩
ISSN: 0021-8979
1089-7550
DOI: 10.1063/5.0041903⟩
Popis: International audience; The epitaxial growth of Mg 3 N 2 thin films by molecular beam epitaxy has been recently achieved. This work presents the structural properties of the films, including grains sizes and lattice rotations, as assessed by x-ray diffraction and transmission electron microscopy. The films' microstructure consists of well-aligned columnar grains 10 nm in diameter that nucleate at the film/substrate interface and that display a significant column twist, in the order of 2.5°. As growth proceeds, tilted and twisted mosaic blocs overgrow these columns, as observed in to many other epitaxial semiconductors. Yet, the rocking curves on symmetric reflections display extremely narrow peaks (∼50 arcseconds), revealing a long-range spatial correlation between structural defects that should not be mistakenly considered as a proof of high crystalline quality.
Databáze: OpenAIRE