Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
| Autor: | Sara Martí-Sánchez, Sebastian Heedt, Peter Krogstrup, Alexandra Fursina, Timm Swoboda, Leo P. Kouwenhoven, Francesco Borsoi, Pavel Aseev, Jordi Arbiol, Joachim E. Sestoft, Luca Binci, R. Koops, Guanzhong Wang, Emanuele Uccelli, Filip Krizek, Frenk Boekhout, Philippe Caroff |
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| Přispěvatelé: | Universidad Autónoma de Barcelona, Microsoft Research, La Caixa, Generalitat de Catalunya, Ministerio de Economía y Competitividad (España), Aseev, Pavel [0000-0003-0343-9302], Arbiol, Jordi [0000-0002-0695-1726], Aseev, Pavel, Arbiol, Jordi |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Letter
Materials science Fabrication GaAs Molecular beam epitaxy Nanowire Bioengineering High Tech Systems & Materials 02 engineering and technology Epitaxy III−V nanowire InAs molecular beam epitaxy General Materials Science Selectivity Quantum Quantum computer III?V nanowire Industrial Innovation business.industry Mechanical Engineering GaAs Selective-area growth General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Amorphous solid Nanoelectronics Optoelectronics III-V nanowire 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Nano Letters, 1, 19, 218-227 Digital.CSIC. Repositorio Institucional del CSIC instname Nano Letters Aseev, P, Fursina, A, Boekhout, F, Krizek, F, Sestoft, J E, Borsoi, F, Heedt, S, Wang, G, Binci, L, Marti-Sanchez, S, Swoboda, T, Koops, R, Uccelli, E, Arbiol, J, Krogstrup, P, Kouwenhoven, L P & Caroff, P 2019, ' Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks ', Nano Letters, vol. 19, no. 1, pp. 218-227 . https://doi.org/10.1021/acs.nanolett.8b03733 Dipòsit Digital de Documents de la UAB Universitat Autònoma de Barcelona Nano Letters: a journal dedicated to nanoscience and nanotechnology, 19(1) |
| ISSN: | 2013-0295 1530-6984 |
| Popis: | Selective-area growth is a promising technique for enabling of the fabrication of the scalable III–V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III–V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III–V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov–Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance. The project was supported by Microsoft Station Q (Delft). S. Martí-Sanchez acknowledges funding from “Programa Internacional de Becas “la Caixa″-Severo Ochoa”. ICN2 members acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 acknowledges support from the Severo Ochoa Programme (MINECO, grant no. SEV-2013-0295) and is funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Autonoma de Barcelona Materials Science PhD program. |
| Databáze: | OpenAIRE |
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