Ultrasensitive, Low-Power Oxide Transistor-Based Mechanotransducer with Microstructured, Deformable Ionic Dielectrics
| Autor: | Jang Yeon Kwon, Dukhyun Choi, Wook Sung Kim, Eunsong Jee, Joo Sung Kim, Do Hwan Kim, Sukjin Jang, Daehwan Choi, Taehoon Sung, Vipin Amoli |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Capacitive sensing Transistor Gate dielectric Electronic skin Oxide 02 engineering and technology Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Ion chemistry.chemical_compound Semiconductor chemistry law Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | ACS Applied Materials & Interfaces. 10:31472-31479 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.8b09840 |
| Popis: | The development of a highly sensitive artificial mechanotransducer that mimics the tactile sensing features of human skin has been a big challenge in electronic skin research. Here, we demonstrate an ultrasensitive, low-power oxide transistor-based mechanotransducer modulated by microstructured, deformable ionic dielectrics, which is consistently sensitive to a wide range of pressures from 1 to 50 kPa. To this end, we designed a viscoporoelastic and ionic thermoplastic polyurethane (i-TPU) with micropyramidal feature as a pressure-sensitive gate dielectric for the indium–gallium–zinc–oxide (IGZO) transistor-based mechanotransducer, which leads to an unprecedented sensitivity of 43.6 kPa–1, which is 23 times higher than that of a capacitive mechanotransducer. This is because the pressure-induced ion accumulation at the interface of the i-TPU dielectric and IGZO semiconductor effectively modulates the conducting channel, which contributed to the enhanced current level under pressure. We believe that the ion... |
| Databáze: | OpenAIRE |
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