A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design
| Autor: | Shivendra Kumar Singh, Gianluca Fiori, Mehak Ashraf Mir, Enrique G. Marin, Thomas Mueller, Marta Perucchini, Dmitry K. Polyushkin, Sheikh Aamir Ahsan |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Physics SPICE circuit and compact modeling Ambipolar diffusion Circuit design Transistor Spice Verilog-A Electrostatics 01 natural sciences field-effect transistor (FET) Electronic Optical and Magnetic Materials Computational physics law.invention 2-D materials Computer Science::Emerging Technologies law Logic gate 0103 physical sciences Field-effect transistor Electrical and Electronic Engineering Negative impedance converter |
| Zdroj: | IEEE Transactions on Electron Devices |
| Popis: | We report a charge-based analytic and explicit compact model for field effect transistors (FETs) based on two-dimensional materials (2DMs), for the simulation of 2DM- based analog and digital circuits. The device electrostatics is handled by invoking 2D density of states and Fermi-Dirac statistics, that are later combined with Lambert-W function and Halley’s correction, so to eventually obtain explicit expressions for the electron and hole charges, which are exploited in the calculation of drift-diffusion currents for both carriers. Further, the charge model is extended to obtain characteristics of 2DM- based negative capacitance FETs. The model is benchmarked against experimental MoS2 FET measurements, and experi- mental ambipolar characteristics of narrow band-gap materials such as black phophorous. Its soundness for SPICE circuit-level simulations is also demonstrated. |
| Databáze: | OpenAIRE |
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