Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm
| Autor: | Antonio Polimeni, Giorgio Pettinari, Marco Felici, Damiano Giubertoni, E. Sterzer, Aldo Amore Bonapasta, Kerstin Volz, Eli Kapon, Elena Blundo, Saeed Younis, Giuseppe Mattioli, Dan Fekete, Francesco Filippone |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
band-gap engineering Defect engineering Condensed Matter Physics dilute nitrides Electronic Optical and Magnetic Materials InGaAsN alloys Biomaterials Matrix (mathematics) hydrogen doping Chemical physics Electrochemistry density functional theory Density functional theory Host (network) quantum-wells Quantum well |
| Zdroj: | Advanced functional materials 32 (2021): 2108862. doi:10.1002/adfm.202108862 info:cnr-pdr/source/autori:Filippone, Francesco; Younis, Saeed; Mattioli, Giuseppe; Felici, Marco; Blundo, Elena; Polimeni, Antonio; Pettinari, Giorgio; Giubertoni, Damiano; Sterzer, Eduard; Volz, Kerstin; Fekete, Dan; Kapon, Eli; Amore Bonapasta, Aldo/titolo:Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix%2FDefect Engineering Paradigm/doi:10.1002%2Fadfm.202108862/rivista:Advanced functional materials (Print)/anno:2021/pagina_da:2108862/pagina_a:/intervallo_pagine:2108862/volume:32 |
| DOI: | 10.1002/adfm.202108862 |
| Popis: | In dilute nitride InyGa1-yAs1-xNx alloys, a spatially controlled tuning of the energy gap can be realized by combining the introduction of N atoms-inducing a significant reduction of this parameter-with that of hydrogen atoms, which neutralize the effect of N. In these alloys, hydrogen forms N-H complexes in both Ga-rich and In-rich N environments. Here, photoluminescence measurements and thermal annealing treatments show that, surprisingly, N neutralization by H is significantly inhibited when the number of In-N bonds increases. Density functional theory calculations account for this result and reveal an original, physical phenomenon: only in the In-rich N environment, the InyGa1-yAs host matrix exerts a selective action on the N-H complexes by hindering the formation of the complexes more effective in the N passivation. This thoroughly overturns the usual perspective of defect-engineering by proposing a novel paradigm where a major role pertains to the defect-surrounding matrix. |
| Databáze: | OpenAIRE |
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