Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade

Autor:	Mircea Dragoman, Adrian Dinescu, Andrei Avram, Daniela Dragoman, Silviu Vulpe, Martino Aldrigo, Tudor Braniste, Victor Suman, Emil Rusu, Ion Tiginyanu
Rok vydání:	2022
Předmět:	RF magnetron sputtering thin films Mechanics of Materials Mechanical Engineering ferroelectrics tin sulfide 2D materials ferroelectricity General Materials Science Bioengineering semiconductors General Chemistry Electrical and Electronic Engineering microwaves
Zdroj:	Nanotechnology
ISSN:	1361-6528 0957-4484
DOI:	10.1088/1361-6528/ac7cf8
Popis:	In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate voltages up to 6 V, whereas the off-state is attained for negative back-gate voltages not exceeding −6 V, the on/off ratio being in the range 102–103 depending on FET dimensions. The SnS FETs show a subthreshold slope (SS) below 60 mV/decade thanks to the in-plane ferroelectricity of SnS and attaining a minimum value SS = 21 mV/decade. Moreover, the low SS values can be explained by the existence of a negative value of the capacitance of the SnS thin film up to 10 GHz (for any DC bias voltage between 1 and 5 V), with the minimum value being −12.87 pF at 0.1 GHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1077d01dc12a5eda9066fffe68d116c5 https://doi.org/10.1088/1361-6528/ac7cf8 Zobrazit plný text záznamu