Exchange biasing of the ferromagnetic semiconductor Ga1−xMnxAs
| Autor: | K. F. Eid, M. B. Stone, K. C. Ku, O. Maksimov, P. Schiffer, N. Samarth, T. C. Shih, C. J. Palmstrøm |
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| Rok vydání: | 2004 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Bilayer Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Biasing Coercivity Condensed Matter::Materials Science Magnetization Exchange bias Ferromagnetism Antiferromagnetism Curie temperature Condensed Matter::Strongly Correlated Electrons |
| Zdroj: | Applied Physics Letters. 85:1556-1558 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1787945 |
| Popis: | We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K) and the Curie temperature of the ferromagnet (T_C = 55.1 +- 0.2 K) are comparable. The resulting exchange bias manifests itself as a clear shift in the magnetization hysteresis loop when the bilayer is cooled in the presence of an applied magnetic field and an enhancement of the coercive field. Comment: pdf file only; submitted to Applied Physics Letters |
| Databáze: | OpenAIRE |
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