Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam

Autor: Daniel Soderstrom, Lucas Matana Luza, Alexandre Bosser, Thierry Gil, Kay-Obbe Voss, Heikki Kettunen, Arto Javanainen, Luigi Dilillo
Přispěvatelé: University of Jyväskylä (JYU), TEST (TEST), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), School of Electrical Engineering [Aalto Univ], Aalto University, Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Helmholtz zentrum für Schwerionenforschung GmbH (GSI)
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: 30th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2019)
30th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2019), Sep 2019, Montpellier, France
Popis: International audience; Stuck and weakened bits in the ISSI 512 Mb SDRAM was investigated in irradiation experiments with a heavy ion microbeam in the GSI facility. Delidded memories were tested in gold and calcium ion beams at 4.8 MeV/u, and stuck bits in the memory from the irradiation were investigated. To study weakened but not fully stuck bits after irradiation, parameters such as the refresh frequency of the memories was varied. The effect on the number of stuck bits from reading and writing the memory was studied, as well as the effect from waiting a time span between writing and reading the memory. These parameters were found to matter in the observed number of errors in the memory. Data on the findings from the microbeam irradiation from tests with different test modes are presented in this paper regarding suck bits and bit upsets. The test modes include dynamic March test and data retention tests with only refresh operations during irradiation.
Databáze: OpenAIRE
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