Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
| Autor: | Alvaro Morales, C.A. Duque, V. Tulupenko, M.E. Mora-Ramos, Esin Kasapoglu, A. Tiutiunnyk, V. Akimov |
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| Přispěvatelé: | [Tiutiunnyk, Anton -- Akimov, Volodymyr -- Tulupenko, Viktor -- Morales, Alvaro L. -- Alberto Duque, Carlos] Univ Antioquia UdeA, Fac Ciencias Exactas & Nat, Inst Fis, Grp Mat Condensada UdeA, Calle 70 52-21, Medellin, Colombia -- [Tiutiunnyk, Anton -- Akimov, Volodymyr -- Tulupenko, Viktor] Donbass State Engn Acad, Dept Phys, Shkadinova 72, UA-84313 Kramatorsk, Ukraine -- [Akimov, Volodymyr] Univ Medellin, Carrera 87 30-65, Medellin, Colombia -- [Mora-Ramos, Miguel E.] Univ Autonoma Estado Morelos, Inst Invest Ciencias Basicas & Aplicadas, Ctr Invest Ciencias, Ave Univ 1001, Cuernavaca 62209, Morelos, Mexico -- [Kasapoglu, Esin] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey, Akimov, Volodymyr -- 0000-0001-9014-3539, Tiutiunnyk, Anton -- 0000-0003-1692-5561 |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Physics
Condensed matter physics 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics Equilateral triangle 01 natural sciences Electronic Optical and Magnetic Materials symbols.namesake Effective mass (solid-state physics) X-ray Raman scattering Quantum dot Electric field 0103 physical sciences symbols Coherent anti-Stokes Raman spectroscopy Atomic physics 010306 general physics 0210 nano-technology Raman scattering |
| Popis: | WOS: 000375219600003 The differential cross-section of electron Raman scattering and the Raman gain are calculated and analysed in the case of prismatic quantum dots with equilateral triangle base shape. The study takes into account their dependencies on the size of the triangle, the influence of externally applied electric field as well as the presence of an ionized donor center located at the triangle's orthocenter. The calculations are made within the effective mass and parabolic band approximations, with a diagonalization scheme being applied to obtain the eigenfunctions and eigenvalues of the x-y Hamiltonian. The incident and secondary (scattered) radiation have been considered linearly-polarized along the y-direction, coinciding with the direction of the applied electric field. For the case with an impurity center, Raman scattering with the intermediate state energy below the initial state one has been found to show maximum differential cross-section more than by an order of magnitude bigger than that resulting from the scheme with lower intermediate state energy. The Raman gain has maximum magnitude around 35 nm dot size and electric field of 40 kV/cm for the case without impurity and at maximum considered values of the input parameters for the case with impurity. Values of Raman gain of the order of up to 10(4) cm(-1) are predicted in both cases. |
| Databáze: | OpenAIRE |
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