2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications
| Autor: | S. Zanchi, S. Rossi, Alessandro Cabrini, Laura Capecchi, Marco Pasotti, Guido Torelli, C. Auricchio, Riccardo Zurla, Vikas Rana, F. Disegni, Paola Zuliani, Emanuela Calvetti, D. Manfre, C. Torti, R. Mukherjee, L. Croce, A. Gambero, P. Mishra, D. Gallinari, Marcella Carissimi, Donatella Brambilla, Vivek Tyagi |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
business.industry Sense amplifier Computer science 020208 electrical & electronic engineering Automotive industry 02 engineering and technology 01 natural sciences Non-volatile memory Phase-change memory Embedded system 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Macrocell Electrical and Electronic Engineering business Throughput (business) Access time Random access |
| Zdroj: | ESSCIRC |
| ISSN: | 2573-9603 |
| DOI: | 10.1109/lssc.2019.2935874 |
| Popis: | This letter presents a 2-Mb embedded phase change memory (ePCM) macrocell designed in 90-nm BJT-CMOS-DMOS (BCD) technology able to address the next generation of automotive and smart-power products exploiting an ePCM cell based on a Ge-rich chalcogenide alloy. The optimized memory allows 16-ns random access time and 5-Mbit/s write throughput from −40 °C to 175 °C, with 100 kcycle endurance. The sense amplifier, the programming circuitry, and the data processing logic able to meet automotive requirements are described. The silicon results are provided. |
| Databáze: | OpenAIRE |
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