Impact of defects on the electrical properties of BiFeO3 thin films
| Autor: | E. B. Araujo, S. P. Reis |
|---|---|
| Přispěvatelé: | Universidade Estadual Paulista (Unesp), Fed Inst Educ Sci & Technol Sao Paulo |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science genetic structures chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics bismuth ferrite 01 natural sciences Oxygen eye diseases Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry thin films 0103 physical sciences Defects sense organs Composite material Thin film 0210 nano-technology Bismuth ferrite |
| Zdroj: | Web of Science Repositório Institucional da UNESP Universidade Estadual Paulista (UNESP) instacron:UNESP |
| Popis: | Made available in DSpace on 2020-12-10T19:56:02Z (GMT). No. of bitstreams: 0 Previous issue date: 2020-02-17 Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) The impact of defects on the electrical properties of bismuth ferrite thin films has been studied. Secondary phases and oxygen vacancies were the main defects considered. Thin films with secondary phases show higher conductivities than single-phase films. Monophasic films annealed in oxygen atmosphere shows lower conductivity than the non-annealed film. For selected thin film with secondary phase, the relaxation in the grain boundary was predominant with activation energy eV, suggesting the first ionization oxygen vacancies as the relaxation mechanism in the studied films. The electric field effect on relaxation processes was similarly to Arrhenius thermally activated process. Sao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, Brazil Fed Inst Educ Sci & Technol Sao Paulo, Votuporanga, Brazil Sao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, Brazil FAPESP: 2017/13769-1 CNPq: 304604/2015-1 |
| Databáze: | OpenAIRE |
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