Effects of ion bombardment and gas incorporation on the properties of Mo/a-Si:H multilayers for EUV applications
| Autor: | Gianluigi Maggioni, V. Mattarello, G. Salmaso, Maria Guglielmina Pelizzo, V. Rigato, Piergiorgio Nicolosi, Alessandro Patelli, Laura E. Depero, Elza Bontempi, Paolo Mazzoldi |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Ion beam analysis Hydrogen Extreme ultraviolet lithography Analytical chemistry chemistry.chemical_element Noble gas Surfaces and Interfaces General Chemistry Partial pressure Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films X-ray reflectivity chemistry Sputtering Materials Chemistry |
| Zdroj: | Surface and Coatings Technology. :40-48 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/s0257-8972(03)00706-0 |
| Popis: | A study of Mo/a-Si:H multilayer for EUV mirrors produced by rf-magnetron sputtering in pure Ar, Xe and Ar/H 2 gas mixtures is presented. The high reflectance mirrors are designed for solar space experiments at 17, 19 and 30.4 nm and for the lithography applications at 13 nm. The multilayers are grown in different ion bombardment conditions determined by different bias levels of the substrate. Plasma diagnostics are performed to correctly evaluate flux and energy of plasma ions bombardment. The a-Si:H layers have been obtained by introducing H 2 gas in the sputtering chamber at different partial pressures during silicon deposition. The deposition rates as well as the composition of Mo and Si layers have been investigated by Ion Beam Analysis (RBS and ERDA). The coating microstructure has been characterised primarily by X-ray micro-diffraction (micro-XRD). X-Ray Reflection analysis (XRR) has been carried out to investigate the layer density and the multilayer structure. RBS analyses show that noble gas (Ar, Xe) incorporation is limited to the Si layers and depends on the sample bias. Noble gas concentration is correlated to the different ion bombardment growth conditions that influence also the (110) orientation of Mo nano-crystals. ERD analyses of Si layers show hydrogen incorporation up to 30 at.% as a function of the H 2 partial pressure. Hydrogen incorporation leads to a decrease of the a-Si layer density. Hydrogen content in Mo layers is less than 0.5 at.% even at the highest H 2 partial pressure. The optical properties of these mirrors have been characterised by EUV reflection measurements. |
| Databáze: | OpenAIRE |
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